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s mhop microelectronics c orp. a product summary (n-channel) v dss i d r ds(on) (m ) max 20 4a 75 @ vgs=2.5v 60 @ vgs=4.5v dual enhancement mode field effect transistor ( n and p chann el ) www.samhop.com.tw jul,22,2010 1 details are subject to change without notice. product summary (p-channel) v dss i d r ds(on) (m ) max -20v -2.5a 190 @ vgs=-2.5v 138 @ vgs=-4.5v ver 1.0 symbolv ds v gs i dm a i d units parameter vv gate-source voltage drain-source voltage absolute maximum ratings ( t a =25 c unless otherwise noted ) drain current-continuous a -pulsed b a n-channel p-channel t a =25 c t a =70 c a 100 w p d c 1.25 c/w t a =25 c thermal characteristics maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja a -55 to 150 t a =70 c 0.8 w 20 12 4 10 3.2 -20 12 -2.5 -2 9.4 STS6604L green product sot 26 top view g1 s2 g2 d1 s1 d2 12 3 6 54 g 1 d 1 s 1 g 2 d 2 s 2
symbol min typ max units bv dss 20 v 1 i gss 100 na v gs(th) 0.5 v 40 g fs s c iss 224 pf c oss 84 pf c rss 67 pf q g 8 nc 11.5 15.4 3.2 t d(on) 5 ns t r ns t d(off) ns t f ns v ds =10v,v gs =0v switching characteristics v dd =10v i d =1a v gs =4.5v r gen =6 ohm total gate charge rise time turn-off delay time v ds =10v,i d =4a,v gs =4.5v fall time turn-on delay time m ohm v gs =4.5v , i d =4a v ds =5v , i d =4a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =16v , v gs =0v v gs =12v , v ds =0v zero gate voltage drain current gate-body leakage current n-channel electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 1.5 v gs =2.5v , i d =3.5a 60 50 75 m ohm c f=1.0mhz c STS6604L www.samhop.com.tw jul,22,2010 2 0.74 nc q gs nc q gd 0.85 2.4 gate-drain charge gate-source charge v ds =10v,i d =4a, v gs =4.5v drain-source diode characteristics v sd diode forward voltage v gs =0v,i s =1.25a 0.81 1.2 v b 15 ver 1.0
symbol min typ max units bv dss -20 v -1 i gss 100 na v gs(th) -0.5 v 110 g fs s c iss 290 pf c oss 40 pf c rss 65 pf q g 8 nc 9 14.5 19 t d(on) 2.9 ns t r ns t d(off) ns t f ns v ds =-10v,v gs =0v switching characteristics v dd =-10v i d =-1a v gs =-4.5v r gen =6 ohm total gate charge rise time turn-off delay time v ds =-10v,i d =-2.5a,v gs =-4.5v fall time turn-on delay time m ohm v gs =-4.5v , i d =-2.5a v ds =-5v , i d =-2.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-16v , v gs =0v v gs =12v , v ds =0v zero gate voltage drain current gate-body leakage current p-channel electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -1.5 v gs =-2.5v , i d =-2.1a 138 150 190 m ohm c f=1.0mhz c STS6604L www.samhop.com.tw jul,22,2010 3 -0.7 v sd nc q gs nc q gd 0.28 1 gate-drain charge gate-source charge diode forward voltage v ds =-10v,i d =-2.5a, v gs =-4.5v drain-source diode characteristics v gs =0v,i s =-1.25a -0.84 -1.2 v notes _ _ _ b a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. 5.2 ver 1.0
STS6604L www.samhop.com.tw jul,22,2010 4 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature n-channel 15 12 9 6 3 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = 2v v g s = 2.5 v 15 12 9 6 3 0 0 0.5 3.0 2.5 2.0 1.5 1.0 125 c -55 c 25 c v g s = 1.5v v g s = 3v 90 75 60 45 30 15 1 1 3 6 9 12 15 v g s =4.5v 1.5 1.4 1.3 1.2 1.1 1.0 0 0 100 75 25 50 125 150 v g s =4.5v i d =4.0a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 1.20 1.15 1.10 1.05 1.00 0.95 0.90 125 150 100 75 50 25 0 -25 -50 i d =250ua ver 1.0 v g s = 4.5 v v g s =2.5v v g s =2.5v i d =3.5a
STS6604L www.samhop.com.tw jul,22,2010 5 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 20 10 1 0.1 0.03 v gs =4.5v single pulse t a =25 c r ds (o n ) l im i t 120 100 80 60 40 20 0 4.5 0 25 c 125 c 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 25 c 75 c 125 c c rs s c s s o c s s i 300 250 200 150 100 50 0 4 6 8 10 12 0 2 5 43 2 1 0 0 1 2 3 4 5 6 7 8 v ds = 10v i d =4a 1 10 100 1 10 100 td(on) tf td(off ) t r ver 1.0 i d =4a 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 75 c vds=10v,id=1a vgs=4.5v 1 0 0 u s 1 ms 10 m s 1 0 0m s d c 1 s
STS6604L www.samhop.com.tw jul,22,2010 6 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance 0.01 0.1 1 2 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th single pulse 0.01 0.5 0.2 0.1 0.05 0.02 ver 1.0
STS6604L www.samhop.com.tw jul,22,2010 7 t j ( c ) -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature p-channel ver 1.0 10 8 6 4 2 0 0 0.7 4.2 3.5 2.8 2.1 1.4 25 c -55 c 125 c 6.0 4.8 3.6 2.4 1.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s = - 2v v g s = -1. 5v v g s = -2 .5v v g s = -4 .5v 240 200 160 120 80 40 1 1 1.2 2.4 3.6 4.8 6.0 v g s =-4.5v v g s =-2.5v 1.5 1.4 1.3 1.2 1.1 1.0 0 0 100 75 25 50 125 150 v g s =-4.5v i d = -2.5a v g s =-2.5v i d = -2.1a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =-250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =-250ua
STS6604L www.samhop.com.tw jul,22,2010 8 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 20 0.02 0.1 1 10 50 100 360 300 240 180 120 60 0 0.5 3.0 3.5 4.0 4.5 0 2.5 2.0 1.5 1.0 i d =-2.5a 25 c 75 c 125 c 20.010.0 1.0 0 0.4 0.8 1.2 1.6 2.0 5.0 125 c 25 c 75 c c rs s c s s o c s s i 420 350 280 210 140 70 0 4 6 8 10 12 0 2 2.5 2.01.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ds = -10v i d =-2.5a 1 10 100 10 1 0.1 100 6 60 vds=10v,id=1a vgs=4.5v td(on) tf td(off ) t r r d s ( o n) l imit v gs =-4.5v single pulse t a =25 c dc 10s 10 0ms 10 ms 10 0 us 1ms ver 1.0
STS6604L www.samhop.com.tw jul,22,2010 9 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance 2 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 0.01 0.1 1 p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ver 1.0
STS6604L www.samhop.com.tw jul,22,2010 10 package outline dimensions sot 26 l detail "a" millimeters inches symbols d e 2.700 3.100 2.500 3.100 e1 1.400 1.800 e e1 b 0.300 0.500 c 0.090 0.200 a a1 0.000 0.130 0.700 1.120 l1 l l1 0 o 10 o 0.106 0.122 0.098 0.122 0.055 0.071 0.012 0.020 0.004 0.008 0.000 0.005 0.028 0.044 0 o 10 o min max min max 0.950 ref. d e1 e e1 e b 1 2 3 6 5 4 a a1 1.900 ref. 0.037 ref. 0.075 ref. 0.300 0.550 0.012 0.022 0.350 0.800 0.014 0.031 detail "a" ver 1.0
STS6604L www.samhop.com.tw jul,22,2010 11 sot 26 tape and reel data sot 26 carrier tape sot 26 reel sot 26 a 4.00 2.00 0.10 + 0.05 4.00 + 0.10 + 1.00 +0.10 0.00 1.50 +0.10 0.00 1.75 0.10 + 3.50 0.05 + 8.0 + 0.30 a b b 0.25 + 0.05 r0. 3 5 max r0.3 ko 1.5 + 0.1 bo 3.2 + 0.1 section a-a 3.3 + 0.1 5 m ax r0.3 r0. 3 section b-b 178.0 + 0.5 60 + 0.5 9.0 1.50 +1.5 -0 2.2 + 0.5 10.6 13.5 + 0.5 scale 2:1 ver 1.0

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